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型号 功能描述 生产厂家 企业 LOGO 操作
S9013R

Plastic-Encapsulate Transistors

FEATURES Complementary to S9012 Excellent hFE linearity

GWSEMI

唯圣电子

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO: 45 V

WINGS

永盛电子

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications?????????

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications

SEMTECH

先之科

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

FAIRCHILD

仙童半导体

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

FAIRCHILD

仙童半导体

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

FAIRCHILD

仙童半导体

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