包装：散装 描述：CUTTER SMALL OVAL BEVEL 工具 钢丝钳

N-channel SiC（碳化硅）功率MOSFETbare die

S4102是SiC（碳化硅）功率MOSFET。其特征是高耐压、低导通电阻、高速开关。\n\n关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。\n\n SiC支持页面\n\n评估板 应用实例\n\n罗姆SiC器件 什么是SiC？\n\n电子基础 • Low on-resistance\n• Fast switching speed\n• Fast reverse recovery\n• Easy to parallel\n• Simple to drive;

N-channel SiC（碳化硅）功率MOSFETbare die

S4103是SiC（碳化硅）功率MOSFET。其特征是高耐压、低导通电阻、高速开关。\n\n关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。\n\n SiC支持页面\n\n评估板 应用实例\n\n罗姆SiC器件 什么是SiC？\n\n电子基础 • Low on-resistance\n• Fast reverse recovery\n• Simple to drive\n;

N-channel SiC 功率MOSFETbare die

S4105是SiC（碳化硅）功率MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 • Low on-resistance\n• Fast switching speed\n• Fast reverse recovery\n• Easy to parallel\n• Simple to drive;

N-channel SiC power MOSFET bare die

Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive Application ・Induction heating ・Motor drives ・Switch mode power supplies ・Solar inverters ・DC/DC converters

Multi-Function Reader Module Data Sheet

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N-channel SiC power MOSFET bare die

文件：664.41 Kbytes Page：13 Pages

N-channel SiC power MOSFET bare die

文件：665.08 Kbytes Page：13 Pages

N-channel SiC power MOSFET bare die

文件：665.13 Kbytes Page：13 Pages

N-channel SiC power MOSFET bare die

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N-channel SiC power MOSFET bare die

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包装：零售封装 描述：CUTTER SMALL OVAL BEVEL ERGO 工具 钢丝钳

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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