650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

封装/外壳：TO-247-3 包装：管件 描述：DIODE SCHOTTKY SILICON CARBIDE S 分立半导体产品 二极管 - 整流器 - 阵列

650V Silicon Carbide Schottky Rectifier

650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage “-A” is an AEC-Q101 qualified device Terminals finish: 100% Pure Tin Pb − Free Device All

封装/外壳：TO-247-3 包装：散装 描述：DIODE SCHOTTKY SILICON CARBIDE S 分立半导体产品 二极管 - 整流器 - 单

650V Silicon Carbide Schottky Rectifier

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

Silicon Carbide Schottky Diode E-Series Automotive

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Higher System Level Efficiency • I

Silicon Carbide Schottky Diode

General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi

Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode E-Series Automotive

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