丝印代码：E3D20065D；Silicon Carbide Schottky Diode E-Series Automotive

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Higher System Level Efficiency • I

丝印代码：E3D20065D；Silicon Carbide Schottky Diode E-Series Automotive

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650 V Discrete Silicon Carbide Schottky Diodes

Lowest forward voltage (Vf) drop over temperature in the industryZero reverse-recovery charge (Qrr) for ultra-fast switching operationsRobust MPS technology with high surge capabilityHigh reverse-voltage blocking capabilityDirect drop-in replacement for current silicon diodes and other silicon carbi • Lowest forward voltage (Vf) drop over temperature in the industry\n• Zero reverse-recovery charge (Qrr) for ultra-fast switching operations\n• Robust MPS technology with high surge capability\n• High reverse-voltage blocking capability\n• Direct drop-in replacement for current silicon diodes and o;

封装/外壳：TO-247-3 包装：管件 描述：650V AUTOMOTIVE SIC DIODE 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi

Silicon Carbide Schottky Diode

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丝印代码：LGE3D20065D；Silicon Carbide SchottkyDiode

文件：3.36241 Mbytes Page：5 Pages