650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

Discrete SiC Schottky Diodes

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wi

Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Wit

Silicon Carbide Schottky Diode

Features  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Wit