650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：DIODE SCHOTTKY SILICON CARBIDE S 分立半导体产品 二极管 - 整流器 - 单

650V Silicon Carbide Schottky Rectifier

650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100% Pure Tin  “-A” is an AEC-Q101 qualified device  Pb −

3rd Generation 650 V, 12 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

650 Volt Schottky Rectifier

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