3rdGeneration650V,12ASiliconCarbideSchottkyDiode

Description WiththeperformanceadvantagesofaSiliconCarbide(SiC) SchottkyBarrierdiode,powerelectronicssystemscanexpect tomeethigherefficiencystandardsthanSi-basedsolutions, whilealsoreachinghigherfrequenciesandpowerdensities. SiCdiodescanbeeasilyparalleledtom

650VoltSchottkyRectifier

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封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 650V 35A TO220-2 分立半导体产品 二极管 - 整流器 - 单

650VSICPOWERSCHOTTKYRECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100%PureTin “-A”isanAEC-Q101qualifieddevice Pb−

650VSICPOWERSCHOTTKYRECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100%PureTin “-A”isanAEC-Q101qualifieddevice Pb−

650VSICPOWERSCHOTTKYRECTIFIERS

175°CTJoperation Ultra-lowswitchingloss Switchingspeedsindependentofoperatingtemperature Lowtotalconductionlosses Highforwardsurgecurrentcapability Highpackageisolationvoltage Terminalsfinish:100%PureTin “-A”isanAEC-Q101qualifieddevice Pb−