3A 650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100 Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free

Discrete SiC Schottky Diodes

3A 650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100 Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

Silicon Carbide Schottky Diode

文件：941.75 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

文件：941.75 Kbytes Page：6 Pages