Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：DIODE SCHOTTKY 650V 3A TO252-2 分立半导体产品 二极管 - 整流器 - 单

SiC肖特基二极管

650 V Discrete Silicon Carbide Schottky Diodes

Silicon Carbide Schottky Diode

文件：941.75 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

文件：941.75 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 650V 11.5A TO252 分立半导体产品 二极管 - 整流器 - 单

3A 650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100 Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free

3A 650V SIC POWER SCHOTTKY RECTIFIERS

 175°C TJ operation  Ultra-low switching loss  Switching speeds independent of operating temperature  Low total conduction losses  High forward surge current capability  High package isolation voltage  Terminals finish: 100 Pure Tin  “-A” is an AEC-Q101 qualified device  Pb − Free