128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)

Features  CMOS 3.0 Volt Core with Versatile I/O  Serial Peripheral Interface (SPI) with Multi-I/O – SPI Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Extended Addressing: 24- or 32-bit address options – Serial Command set and footprint compatible with S25FL-A, S2

128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 3.0V SPI Flash Memory

General Description The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process lit

256Mbit (32Mbyte)/128Mbit (16Mbyte),3.0 V FL-L Flash Memory

文件：1.28354 Mbytes Page：158 Pages

128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 3.0V SPI Flash Memory

General Description The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process lit

MirrorBit짰 Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O

General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process li

256Mbit (32Mbyte)/128Mbit (16Mbyte),3.0 V FL-L Flash Memory

文件：1.28354 Mbytes Page：158 Pages