256Mbit (32Mbyte)/128Mbit (16Mbyte),3.0 V FL-L Flash Memory

文件：1.28354 Mbytes Page：158 Pages

128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 3.0V SPI Flash Memory

General Description The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process lit

256Mbit (32Mbyte)/128Mbit (16Mbyte),3.0 V FL-L Flash Memory

文件：1.28354 Mbytes Page：158 Pages

封装/外壳：24-TBGA 包装：卷带（TR） 描述：IC FLASH 256MBIT SPI/QUAD 24BGA 集成电路（IC） 存储器

封装/外壳：24-TBGA 包装：托盘 描述：IC FLASH 256MBIT SPI/QUAD 24BGA 集成电路（IC） 存储器

256 Mb（32 MB）FL-L 闪存 SPI muti-I/O，3.0 V

256 Mb（32 MB）FL-L 闪存 SPI muti-I/O，3.0 V

256 Mb（32 MB）FL-L 闪存 SPI muti-I/O，3.0 V

128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 3.0V SPI Flash Memory

General Description The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process lit

MirrorBit짰 Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O

General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process li