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型号 功能描述 生产厂家 企业 LOGO 操作
S2012V

SCRs (1 A to 70 A)

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

LITTELFUSE

力特

S2012V

RoHS Compliant

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

LITTELFUSE

力特

S2012V

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

TECCOR

S2012V

RoHS Compliant

文件:218.54 Kbytes Page:12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

S2012V

RoHS Compliant, Electrically-isolated package

文件:218.54 Kbytes Page:12 Pages

LITTELFUSE

力特

S2012V

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:散装 描述:SCR 200V 12A TO251 分立半导体产品 晶闸管 - SCR

LITTELFUSE

力特

S2012V

可控硅整流器

LITTELFUSE

力特

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:散装 描述:SCR 200V 12A TO251 分立半导体产品 晶闸管 - SCR

LITTELFUSE

力特

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

STMICROELECTRONICS

意法半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

NTE

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

STMICROELECTRONICS

意法半导体

S2012V产品属性

  • 类型

    描述

  • dv/dt @ 125°C (V/μs):

    250

  • IDRM@VDRM 125°C (mA):

    1

  • IDRM@VDRM 25°C (mA):

    0.01

  • Max Gate Trigger Current (IGTMAX) (mA):

    20

  • On-State Current (Itrms) (A):

    12

  • Non-Repetitive Surge Current (ITSM 60Hz) (A):

    120

  • Gate Trigger Voltage MAX:

    1.5

  • tgt (μs):

    2

  • Repetitive Peak Off-State Voltage (VDRM) (V):

    200

  • VTM (V):

    1.6

  • Replaced By Part Number:

    S4012V

  • Turn-off Time (µs):

    35

更新时间:2026-5-19 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Littlefuse/Teccor
24+
TO-251
50000
TECCOR
25+
NA
20000
原装
LITTELFUSE/力特
25+
TO-251-3
169
就找我吧!--邀您体验愉快问购元件!
力特/Littelfuse
22+
TO251
6000
十年配单,只做原装
TECCOR/LITT
23+
TO-251
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
LITTELFUSE/力特
23+
TO-251-3
50000
全新原装正品现货,支持订货

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