丝印代码：S157；SINGLE BILATRAL ANALOG SWITCH

Features « Operation Voltage Range: 1.65~5.5V o loFF supports partial-power-down mode « Low static power consumption; lcc=10pA (Max.) « £24mAoutput drive (Vcc=3.0V) ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charged-Device Model (

包装：散装 描述：CUTTER TAPER RELIEVED FLSH 工具 钢丝钳

丝印代码：S157SEP；SN54SC8T157-SEP Radiation Tolerant, Quadruple 2-Line to 1-Line Data Selectors/ Multiplexers

1 Features • Vendor item drawing available, VID V62/25624-01XE • Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) • Radiation - Single-Even

高集成射频前端芯片

S55722-21是一款基于慧智微5G技术平台AgiFEM5G™ 的高集成射频前端芯片，芯片集成了LNA、滤波器及开关等器件，单芯片支持n77/78 2R架构。 • 产品型号\n•支持频段\n•尺寸\n• 产品特性\n集成2路多级增益档LNA，可兼容所有主流平台集成SRS开关，支持SRS天线快速切换集成天线开关，支持多频段DL MIMO支持MIPI RFFE V3.0控制协议;

3.3V PECL High Frequency VCXO

3.3V PECL High Frequency VCXO

文件：281.5 Kbytes Page：4 Pages

3.3V PECL High Frequency VCXO

文件：281.5 Kbytes Page：4 Pages

3.3V PECL High Frequency VCXO

文件：281.5 Kbytes Page：4 Pages

3.3V PECL High Frequency VCXO

文件：281.5 Kbytes Page：4 Pages

3.3V PECL High Frequency VCXO

文件：281.5 Kbytes Page：4 Pages

包装：散装 描述：CUTTER 工具 钢丝钳

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 400 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MI

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

Quad 2-input multiplexer

DESCRIPTION The 74LVC157A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 and 5 V env

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)

Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays. Features: Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA Curre