包装：散装 描述：CUTTER OVAL FLSH 工具 钢丝钳

300A Threaded Stud Type Screw Silicon Rectifier Diodes for Excitation

Features ※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Exc

300A Threaded Stud Type Screw Silicon Rectifier Diodes for Excitation

Features ※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Exc

T1/E1/CEPT/ISDN-PRI TRANSFORMER

文件：71.97 Kbytes Page：1 Pages

LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

文件：2.38685 Mbytes Page：47 Pages

OPERATION LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR

文件：2.66004 Mbytes Page：38 Pages

T1/E1/CEPT/ISDN-PRI TRANSFORMER

文件：77.44 Kbytes Page：1 Pages

SUPER LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR

文件：3.521 Mbytes Page：56 Pages

平面肖特基

LOW CURRENT CONSUMPTION OUTPUT CAPACITOR-LESS

文件：927.98 Kbytes Page：43 Pages

5150 PIXELS CCD LINEAR IMAGE SENSOR

5150 PIXELS CCD LINEAR IMAGE SENSOR

文件：291.53 Kbytes Page：22 Pages

平面肖特基

5.5 V INPUT, 100 mA CMOS VOLTAGE REGULATOR WITH 0.35 uA SUPER LOW CURRENT CONSUMPTION

文件：2.2179 Mbytes Page：31 Pages

包装：散装 描述：RF ANT 2.4GHZ WHIP/TILT CONN 6\ RF/IF，射频/中频和 RFID RF 天线

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND DPDT MMIC SWITCH

DESCRIPTION The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage operation. It is housed in a very small 8-pin plastic SSOP package ava

L-BAND SPDT SWITCH

DESCRIPTION µPG132G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us

L-BAND SPDT SWITCH

DESCRIPTION UPG133G is an L-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 8 pin SSOP that is smaller than us