丝印代码：S126；BUS BUFFER/LINE DRIVER 3-STATE

Features » Operate from 1.65V to 5.5V » Inputs Accept Voltages to 5.5V » High Noise Immunity » Low Power Dissipation « ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) ~1000-V Charged-Device Model (C101) » SOT23-5 Package Available

包装：盒 描述：NUT DRIVR HEX SOCKET 3/8\ 工具 螺丝和螺母起子

封装/外壳：模块，SMA 连接器 包装：盒 描述：PIN SWITCH RF/IF，射频/中频和 RFID 射频开关

Adhesives Selection Guide

Adhesives and Sealants That Accommodate a Wide Range of Applications, Materials, and Environmental Conditions

THINKI 300A Silicon Rotating Rectifier Diode for Generator Exciter

Features ※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Exc

Adhesives Selection Guide

Adhesives and Sealants That Accommodate a Wide Range of Applications, Materials, and Environmental Conditions

FAST, PERMANENT FIELD REPAIRS TO HIGH-TEMPERATURE PTFE WIRE AND CABLE

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RMS on -state current

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倾角开关

E120: 12x10G/40G/100G MACsec

E240: 24x10G/40G/100G MACsec

Stainless Disc Springs

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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