SPARK QUENCHER

Features ● Designed for 100VAC line. ● Large devices have isolated external mounting tab. ● Two lead style (bare wire or PVC lead). Applications ● Suppressing noise occuring in Automatic machines, Office appliances and Power source.

SPARK QUENCHER

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Ceramic Singlelayer DC Disc Capacitors for General Purpose

FEATURES • High capacitance with small size • High stability • Crimp and straight lead styles • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Temperature compensation • Coupling and decoupling • Bypassing

Ceramic Singlelayer DC Disc Capacitors for General Purpose

FEATURES • High capacitance with small size • High stability • Crimp and straight lead styles • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Temperature compensation • Coupling and decoupling • Bypassing

COB型，适用于无铅焊料回流

S12028 通过在光电二极管背面形成MEMS结构，增强了近红外的灵敏度。此产品比之前产品（S5821）的灵敏度有了极大提高。 \n-近红外波段高灵敏度： 0.5 A/W (λ=1060 nm)\n-适用于无铅焊料回流\n-感光面积: φ1.2 mm\n-高可靠性封装： 2-pin TO-18;

Low bias operation, for 800 nm band

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低偏置电压，适用于800 nm波段这是一款800nm近红外波段硅APD，可以工作在200V或更低的低偏置电压下。适用于FSO（Free Space Optics，自由空间光学）和光学测距仪等应用中。特性：--低偏置电压下稳定工作--高速响应--高灵敏度和低噪声   详细参数   类型  近红外型（低偏置）

Enhanced near IR sensitivity, using a MEMS

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包装：零售封装 描述：SOLUS, 1000-SERIES, S1202 1=1PC 工具 个人防护装备（PPE）

包装：散装 描述：3M SOLUS 1000 SERIES S1202SGAF-T 工具 个人防护装备（PPE）

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

Battery power unit

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Battery power unit

文件：123.15 Kbytes Page：24 Pages