丝印代码：S107；2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

Applications • LTE cellular infrastructure and ISM band systems • Ultra low-noise, high gain and high linearity systems • Digital satellite radio Features • Ultra-low NF: 0.85 dB @ 2.6 GHz • High gain: 32 dB @ 2.6 GHz • Low quiescent current: 125 mA • Stage 1 and 2 adjustable current •

丝印代码：S107；BUFFER/DRIVER WITH OPEN-DRAIN OUTPUT

Features « Supports 5-V VCC Operation « lor Supports Partial-Power-Down Mode Operation ® +24-mA Output Drive at 3.3 V o Low Power Consumption, 10-yA Max ICC » ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) -1000-V Charged-Devic

Zero-Volt Cross Switching

APPLICATIONS • Valve control • Solenoids • Home appliances • Metering equipment • Heating elements FEATURES • Zero-Volt Cross Switching • High transient immunity • 600V blocking voltage • 0.8A maximum continuous current • High input-to-output isolation • Solid state reliability

AC Output SSRs

\n \n Products MOSFET Output SSRsAC Output SSRsOptocouplersTRIAC DriversMOSFET DriversIGBT DriversSpecialty ProductsHigh-Temp / Hi-RelLimited Support DevicesCompany About SSOProduct Focus & Industry NewsThe Latest from Our LabEmploymentPrivacy PolicyTerms & Conditions of SaleLimitation of

1 Form A Solid State Relay

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SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

使用全耗尽CCD技术，实现紫外灵敏度增强

S10747-0909是一款背照式CCD面图像传感器，通过施加偏执电压，在厚硅基底上形成了加厚的耗尽层， 极大地提高了近红外灵敏度和软X射线探测效率。 \n- 量子效率：70% (λ=1000 nm, Ta=25 ℃) \n- 像素尺寸： 24 × 24 μm\n-512 × 512像素\n-低读出噪声;

Zero-Volt Cross Switching

Features • Zero-Volt Cross Switching • Input Series Limiting Resistor (300Ω TYP) • High Blocking Voltage (600V MIN) • High Transient Immunity • 0.8A Maximum Continuous Current • Low Input Control Current • Long Life / High Reliability • RoHS / Pb-Free / REACH Compliant Applications • V

High transient immunity

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Electrical Specifications

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SKY

Enhanced near-infrared sensitivity by using fully-depleted CCD technology

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CCD area image sensor

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T1/CEPT/ISDN-PRI TRANSFORMERS

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T1/E1/CEPT/ISDN-PRI TRANSFORMERS

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包装：盒 描述：WASHER SHOULDER 5/8 FIBRE 五金件，紧固件，配件 垫圈 - 套管，凸肩

Si PIN photodiodes

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1 Form A Solid State Relay

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Zero-Volt Cross Switching

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TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP