位置:首页 > IC中文资料 > S1065K

型号 功能描述 生产厂家 企业 LOGO 操作
S1065K

Electrical Specifications

文件:1.2956 Mbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

POLYFET

Avalanche Diodes with built-in Thyristor

Avalanche Diodes with built-in Thyristor

SANKEN

三垦

Versatile telephone transmission circuit with dialler interface

文件:154.29 Kbytes Page:28 Pages

PHILIPS

飞利浦

S1065K数据表相关新闻