PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

HelioProtection® HP15NH Photovoltaic fuse-links gPV 1500VDC

FEATURES & BENEFITS • Global acceptance • Low fault current interrupting capability • Temperature cycle withstand capability • Durable construction for enhanced system longevity • High efficiency with low power losses • Available in 3 versions: plain blade, direct mounted, direct mounted wit

Avalanche Diodes with built-in Thyristor

Avalanche Diodes with built-in Thyristor

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Versatile telephone transmission circuit with dialler interface

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