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型号	功能描述	生产厂家企业	LOGO
RZ1065	Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor	SANKEN 三垦	SANKEN
RZ1065	Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RZ1065	Avalanche Diodes with built-in Thyristor Avalanche Diodes with built-in Thyristor	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RZ1065	Avalanche Diodes with built-in Thyristor	SANKEN 三垦	SANKEN
F1065	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime	POLYFET	POLYFET
S1065J	SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip	TECCOR	TECCOR
S1065P	SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip	TECCOR	TECCOR
TEA1065	Versatile telephone transmission circuit with dialler interface 文件：154.29 Kbytes Page：28 Pages	PHILIPS 飞利浦	PHILIPS