适用于真空紫外（VUV）探测  高可靠性

S10043 是一款专门用于高精度、高稳定性探测大功率ArF受激准分子激光(λ=193 nm) 的光电二极管。其结合了我们最新的超薄PN结成形技术和高可靠性金属膜成形技术，即使暴露在1 kJ/cm2ArF受激准分子激光束下，灵敏度也几乎没有变化。 \n-即使暴露在1 kJ/cm2ArF受激准分子激光束下，也有极大的灵敏度稳定性\n-无窗封装;

Highly reliable photodiode for VUV detection

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Si photodiode

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45 efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliab