12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45 efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliab

12 Watts, 1.9?.0 GHz GOLDMOS Field Effect Transistor

PNEUFIT 10 series Push-in fittings

> Port size: Ø 4 ... 16 mm O/D tube, ISO G, ISO R, ISO Rc and NPT threads > Very compact units > Easy tube insertion for rapid assembly of pneumatic circuits > Positive tube anchorage > All BSP taper threads pre-coated with non- PTFE based sealant > Straight adaptors feature internal

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Nylon PCB Supports - Imperial Spacing

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