12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor

Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45 efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliab

12 Watts, 1.9?.0 GHz GOLDMOS Field Effect Transistor

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Highly reliable photodiode for VUV detection

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