DESCRIPTION

The μPA2780GR is N-channel Power MOSFET, which built a

Schottky Barrier Diode inside.

This product is designed for synchronous DC/DC converter

application.

FEATURES

• Built a Schottky Barrier Diode

• Low on-state resistance

RDS(on)1 = 6.2 mΩ TYP. (VGS = 10 V, ID = 7 A)

RDS(on)2 = 8.7 mΩ TYP. (VGS = 4.5 V, ID = 7 A)

RDS(on)3 = 10.3 mΩ TYP. (VGS = 4.0 V, ID = 7 A)

• Low Ciss: Ciss = 1200 pF TYP.

• Small and surface mount package (Power SOP8)