Description

The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications.

Features

• Low on-state resistance

⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A)

⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A)

• Low Ciss 2100 pF TYP.

• Built-in gate protection diode

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant