Description

This product is Dual N-Channel MOS Field Effect Transistor

designed for power management application of

notebook computers, and Li-ion battery application.

Features

• Dual MOS FET chips in small package

• 2.5 V gate drive type and low on-resistance

RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A)

RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)

• Low Ciss Ciss = 750 pF Typ.

• Built-in G-S protection diode

• Small and surface mount package

(Power SOP8)