DESCRIPTION

This product is Dual N-channel MOS Field Effect

Transistor designed for DC/DC converters and power

management applications of notebook computers.

FEATURES

• Dual chip type

• Low on-resistance

RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A)

RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)

• Low input capacitance Ciss = 895 pF TYP.

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)