DESCRIPTION

This product is Dual N-Channel MOS Field Effect

Transistor designed for power management

application of notebook computers, and Li-ion

battery application.

FEATURES

• Dual MOS FET chips in small package

• 2.5-V gate drive type and low on-resistance

RDS(on)1 = 30 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)

RDS(on)2 = 40 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)

• Low Ciss Ciss = 800 pF TYP.

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)