DESCRIPTION

This product is Dual N-Channel MOS Field Effect

Transistor designed for power management

application of notebook computers, and Li-ion battery application.

FEATURES

• Dual MOSFET chips in small package

• 2.5 V Gate Drive Type and Low On-Resistance

RDS(on)1 = 30 mW Max. (VGS = 4.5 V, ID = 3.0 A)

RDS(on)2 = 40 mW Max. (VGS = 2.5 V, ID = 3.0 A)

• Low Ciss Ciss = 740 pF Typ.

• Built-in G-S Protection Diode

• Small and Surface Mount Package

(Power SOP8)