DESCRIPTION

This product is Dual N-channel MOS Field Effect

Transistor designed for Li-ion battery applications

and power management applications of notebook computers.

FEATURES

· Dual chip type

· Low on-resistance

RDS(on)1 = 32 mW MAX. (VGS = 10 V, ID = 3.5 A)

RDS(on)2 = 53 mW MAX. (VGS = 4 V, ID = 3.5 A)

· Low input capacitance Ciss = 780 pF TYP.

· Built-in G-S protection diode

· Small and surface mount package (Power SOP8)