DESCRIPTION

The NP82N06MLG and NP82N06NLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES

• Logic level

• Built-in gate protection diode

• Super low on-state resistance

RDS(on)1 = 7.4 mΩ MAX. (VGS = 10 V, ID = 41 A)

RDS(on)2 = 9.7 mΩ MAX. (VGS = 5 V, ID = 41 A)

• High current rating

ID(DC) = ±82 A

• Low input capacitance

Ciss = 5700 pF TYP.

• Designed for automotive application and AEC-Q101 qualified