SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

·Channel Temperature 175 degree rated

·Super Low On-state Resistance

RDS(on)1 = 9.0 mW (MAX.)(VGS = 10 V, ID = 41 A)

RDS(on)2 = 12 mW (MAX.)(VGS = 5 V, ID = 25 A)

· Low Ciss : Ciss = 3350 pF (TYP.)

· Built-in Gate protection diode