SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

· Channel Temperature 175 degree rated

· Super Low On-state Resistance

RDS(on)1 = 8.5 mW (MAX.) (VGS = 10 V, ID = 41 A)

RDS(on)2 = 10 mW (MAX.) (VGS = 5 V, ID = 41 A)

· Low Ciss : Ciss = 4830 pF (TYP.)

· Built-in Gate protection diode