N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

The 2SK3576 is a switching device which can be driven

directly by a 2.5 V power source.

The device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

• 2.5V drive available

• Low on-state resistance

RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)

RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)

RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)