DESCRIPTION

The 2SK3575 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES

• 4.5V drive available

• Low on-state resistance

RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 42 A)

• Low gate charge

QG = 70 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A)

• Avalanche capability ratings

• Surface mount device available