NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

The 2SD2164 is a single power transistor developed especially

for high hFE. This transistor is ideal for simplifying drive circuits and

reducing power dissipation because its hFE is as high as that of

Darlington transistors, but it is a single transistor.

In addition, this transistor features a small resin insulated

package, thus contributing to high-density mounting and mounting

cost reduction.

FEATURES

• High hFE and low VCE(sat):

hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)

VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)

• Full mold package that does not require an insulating board or

insulation bushing