位置:RM12N100S8 > RM12N100S8详情

RM12N100S8中文资料

厂家型号

RM12N100S8

文件大小

371.48Kbytes

页面数量

7

功能描述

N-Channel Super Trench Power MOSFET

数据手册

下载地址一下载地址二到原厂下载

生产厂商

RECTRON

RM12N100S8数据手册规格书PDF详情

Description

The RM12N100S8 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of RDS(ON) and Qg. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

VDS =100V,ID =12A

RDS(ON)=8mΩ (typical) @ VGS=10V

RDS(ON)=11mΩ (typical) @ VGS=4.5V

Excellent gate charge x RDS(on) product(FOM)

Very low on-resistance RDS(on)

150 °C operating temperature

Pb-free lead plating

100% UIS tested

Application

DC/DC Converter

Ideal for high-frequency switching and

synchronous rectification

Halogen-free

更新时间:2025-10-12 11:06:00
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