Description

The RM12N100LD uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

VDS = 100V,ID =12A

RDS(ON) < 112mΩ @ VGS=10V

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM12N100LDV

RDS(ON) < 120mΩ @ VGS=4.5V

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply