隔离型DC/DC 电源

这款小型 DIP24 转换器的主要特性是尺寸小，隔离电压极高，非常适合高度复杂而电路板空间有限的工业、测试和测量以及医疗应用的设计。 • 通过 UL/CSA/IEC/EN 安全认证并获得 CB 报告\n• 连续短路保护（可选）\n• 节省空间封装\n• 适用于 IGBT 应用\n;

封装/外壳：24-DIP 模块，14 引线 包装：管件 描述：DC DC CONVERTER 24V 2W 电源 - 板安装 直流转换器

Video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module mounted in SOT115L package. FEATURES • Typical transition times (10 to 90) with CL at 8.5 pF: – 2.2 ns rise and 2.0 ns fall with 35 V (p-p) swing – 2.3 ns rise and 2.1 ns fall with 40 V (p-p) swing – 2.5 ns rise and 2.2 ns fall with 50 V (p-p)

Video driver hybrid amplifier

DESCRIPTION Hybrid amplifier module mounted in SOT115L package. FEATURES • Typical transition times (10 to 90) with CL at 8.5 pF: – 2.2 ns rise and 2.0 ns fall with 35 V (p-p) swing – 2.3 ns rise and 2.1 ns fall with 40 V (p-p) swing – 2.5 ns rise and 2.2 ns fall with 50 V (p-p)

PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • High current type (IC(MAX) = −800mA) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Low VCE (sat) • Complementary to RN1421~RN1427

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertexs wellproven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with

ECONOLINE - DC/DC - CONVERTER

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