丝印代码：RTQ2104GSPQA；36VIN, 3A, High Efficiency, 2.1MHz, Synchronous Step-Down Converter with Low Quiescent Current

General Description The RTQ2104 is a 3A, high-efficiency, current mode synchronous step-down converter which is optimized for automotive applications. The device operates with input voltages from 3V to 36V and is protected from load dump transients up to 42V, eases input surge protection desi

封装/外壳：8-SOIC（0.154"，3.90mm 宽）裸露焊盘 功能：降压 包装：卷带（TR） 描述：IC BUCK ADJ 3A SYNC PSOP-8 集成电路（IC） 稳压器 - DC-DC 开关稳压器

封装/外壳：8-SOIC（0.154"，3.90mm 宽）裸露焊盘 功能：降压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC BUCK ADJ 3A SYNC PSOP-8 集成电路（IC） DC DC 开关稳压器

256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104/5/6/7 are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. These products utilize synchronous or asynchr

256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms

The MPC2104P (256KB) and MPC2105P (512KB) are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. All of these cache m

3V AM/FM 1 CHIP TUNER IC (FOR DIGITAL TUNING SYSTEM)

TA2104BN, TA2104BFN are AM/FM 1 chip tuner ICs, which are designed for portable Radios and 3V Head phone Radios.

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in

P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high in