Power PCB Relay RTH 105째C 16A

Power PCB Relay RTH 105°C 16A ■ 1 pole 16A, 1 form C (CO) or 1 form A (NO) contact ■ Ambient temperature 105°C ■ Sensitive coil 400mW ■ 5kV/10mm coil-contact ■ Reinforced insulation ■ WG version: Product in accordance to IEC 60335-1

包装：散装 描述：RELAY GEN PURPOSE SPDT 16A 12V 继电器 功率继电器，高于 2 A

包装：散装 描述：RELAY GEN PURPOSE SPDT 16A 12V 继电器 功率继电器，高于 2 A

继电器

Power PCB Relay RTH 105째C 16A

Power PCB Relay RTH 105°C 16A ■ 1 pole 16A, 1 form C (CO) or 1 form A (NO) contact ■ Ambient temperature 105°C ■ Sensitive coil 400mW ■ 5kV/10mm coil-contact ■ Reinforced insulation ■ WG version: Product in accordance to IEC 60335-1

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All