WiFi 6 FEM - 5GHz

Bottom-side cooled 650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 100 mΩ • IDS(max) = 15 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switchin

6.35mm Pitch Beau PCB Tri-Barrier Terminal Strip, without Mounting Ends

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