4+1通道电源管理IC

RT9953 是为数码相机和其它掌上型设备设计的完整电源供应方案，是一款多通道的电源管理 IC ，其中包括1路同步升压型 DC/DC 转换器、一路可在同步升压和降压之间进行选择的 DC/DC 转换器、两路同步降压型 Dc/DC 转换器和一路低压差线性稳压器。\n\nRT9953 被设计来满足 DSC 的下述需求：\n\nCH1 的同步升压输出为马达或是 DSC 系统的 I/O 部分供电。\n\nCH2 的可选择的同步升压或降压输出为马达或 DSC 系统的 I/O 部分供电。\n\nCH3/4 的同步降压输出为 DSP 内核和内存部分供电。\n\nCH5 是一个具有软起动功能的低压差、低噪声、5 • 一路同步升压/降压可选的转换器\n• 支持两节 AA 电池或锂离子电池供电的应用\n• 内置软启动控制\n• 4个通道的内置补偿\n• 集成了功率开关\n• 高达95%的效率\n• 降压转换器的最高占空比可达 100%\n• 可调的输出电压\n• 恒定的 1MHz 开关切换工作频率\n• 线性稳压器可以配合低 ESR 陶瓷电容工作\n• 快速线路/负载瞬态响应能力\n• 线性稳压器具有高 PSRR\n• 符合 RoHS 规范，不含卤素;

41 CH Power Management IC

文件：485.83 Kbytes Page：19 Pages

丝印代码：DF=**；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

丝印代码：DF=**；Power Transistor (80V, 1A)

● Features 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181.

丝印代码：DF=**；Power Transistor

文件：163.94 Kbytes Page：4 Pages

封装/外壳：24-WFQFN 裸露焊盘 包装：管件 描述：IC 4CH POWER MANAGEMENT 集成电路（IC） 电源管理 - 专用

Power Transistor (80V, 1A)

丝印代码：DF=**；Power Transistor (80V, 1A)

文件：177.89 Kbytes Page：4 Pages

丝印代码：DF=**；Power Transistor (80V, 1A)

文件：96.42 Kbytes Page：5 Pages

丝印代码：DF=**；Power Transistor (80V, 1A)

文件：120.9 Kbytes Page：4 Pages

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET