Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -3.5A, RDS(ON) = 80mW @VGS = -10V. RDS(ON) = 130mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired.

P Channel MOSFET

Electronic, 3 C #16 Str TC, PVC-NYL Ins, OA TC Brd, PVC Jkt

Product Description Electronic, 3 Conductor 16AWG (19x29) Tinned Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(90) Shield, PVC Outer Jacket

Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

400 MSPS 14-Bit, 1.8V CMOS Direct Digital Synthesizer

GENERAL DESCRIPTION The AD9953 is a direct digital synthesizer (DDS) featuring a 14-bit DAC operating up to 400 MSPS. The AD9953 uses advanced DDS technology, coupled with an internal high speed, high performance DAC to form a digitally programmable, complete high frequency synthesizer capable of

400MSPS, 14-Bit, 1.8 V CMOS Direct Digital Synthesizer

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