PowerTransistor(80V,1A)

●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181.

PowerTransistor(80V,1A)

●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181.

PowerTransistor

文件：163.94 Kbytes Page：4 Pages

封装/外壳：24-WFQFN 裸露焊盘 包装：管件 描述：IC 4CH POWER MANAGEMENT 集成电路（IC） 电源管理 - 专用

PowerTransistor(80V,1A)

文件：177.89 Kbytes Page：4 Pages

PowerTransistor(80V,1A)

文件：96.42 Kbytes Page：5 Pages

PowerTransistor(80V,1A)

文件：120.9 Kbytes Page：4 Pages

PowerMOSFET(Vdss=-30V,Rds(on)=0.25ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

Electronic,3C#16StrTC,PVC-NYLIns,OATCBrd,PVCJkt

ProductDescription Electronic,3Conductor16AWG(19x29)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket

DualP-ChannelEnhancementModeMOSFET

FEATURES ■-30V,-2.9A,RDS(ON)=100mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage.

400MSPS14-Bit,1.8VCMOSDirectDigitalSynthesizer

GENERALDESCRIPTION TheAD9953isadirectdigitalsynthesizer(DDS)featuringa14-bitDACoperatingupto400MSPS.TheAD9953usesadvancedDDStechnology,coupledwithaninternalhighspeed,highperformanceDACtoformadigitallyprogrammable,completehighfrequencysynthesizercapableof

400MSPS,14-Bit,1.8VCMOSDirectDigitalSynthesizer

文件：648.08 Kbytes Page：32 Pages