Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4A, RDS(ON) = 65mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package.

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

50V CERAMIC DISC

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Dual P-Channel Enhancement Mode Field Effect Transistor

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4-channel audio amplifier (SE: 1 W to 25 W; BTL: 4 W to 50 W)

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