5A Synchronous Boost Converter with Output Isolation MOS

General Description The RT4841 is Synchronous Boost Converter with output isolation MOS for active matrix thin film transistor (TFT) liquid crystal displays (LCDs). The Device incorporates current mode, fixed-frequency, pulse width modulation (PWM) circuitry and fully integrated synchronous

5A Synchronous Boost Converter with Output Isolation MOS

The RT4841 is Synchronous Boost Converter with output isolation MOS for active matrix thin film transistor (TFT) liquid crystal displays (LCDs). \n\n\n\nThe Device incorporates current mode, fixed-frequency, pulse width modulation (PWM) circuitry and fully integrated synchronous boost converter with •8.6V to 15.9V Input Supply Voltage\n•Isolation Switch Controller\n•Fixed 500kHz Switching Frequency\n•Cycle by Cycle OCP Protection\n•Thin 20-Lead WQFN Package;

丝印代码：72；5A Synchronous Boost Converter with Output Isolation MOS

General Description The RT4841 is Synchronous Boost Converter with output isolation MOS for active matrix thin film transistor (TFT) liquid crystal displays (LCDs). The Device incorporates current mode, fixed-frequency, pulse width modulation (PWM) circuitry and fully integrated synchronous

封装/外壳：20-WFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BOOST ADJ 6A WQFN-20 集成电路（IC） 特殊用途稳压器

Band-switching diodes

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance:

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features:

GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

Precision Rail-to-Rail Input & Output Operational Amplifiers

文件：522.84 Kbytes Page：20 Pages

Precision Rail-to-Rail Input & Output Operational Amplifiers

文件：522.84 Kbytes Page：20 Pages