SiC SBD

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

650 V, dual 10 A, power Schottky silicon carbide diode

Features • No or negligible reverse recovery • Switching behavior independent of temperature • Low Forward voltage drop • Operating Tj from -40 °C to +175 °C • ECOPACK2 compliant component • Power efficient product Description The STPSC20065C is an ultra-high performance power Schottky d

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

Silicon Carbide Schottky Diode

文件：997.58 Kbytes Page：6 Pages

Enhanced surge capability

文件：519.659 Kbytes Page：4 Pages