650V/20A SiC Schottky Diode

Features: • New Thin Wafer Technology( • Low Forward Voltage Drop VF) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Temperature-independent Switching Applications: • Replace Bipolar with Unipolar Device • Reduction of Heat Sink Size • Parallel Devices Without Thermal R

丝印代码：HSC20065W；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

650 V power Schottky silicon carbide diode

Features  No reverse recovery charge in application current range  Switching behavior independent of temperature  Dedicated to PFC applications  Insulated package TO-220AC ins:  Insulated voltage: 2500 V rms  Typical package capacitance: 7 pF  High forward surge capability  ECOPACK

Silicon Carbide Schottky Diode

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Enhanced surge capability

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