丝印代码：HSC06065AC；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

丝印代码：HSC06065F；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

丝印代码：06065TDW；SILICON CARBIDE SCHOTTKY DIODE

FEATURES • Positive temperature coefficient for safe operation and easy of paralleling • 175°C maximum operating junction temperature • Essentially no reverse or forward recovery • Extremely fast switching not dependent on temperature • Qualified according to AEC-Q101 Rev_D • Lead-Free Fini

6A竊?50V Silicon Carbide Diode

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Enhanced surge capability

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