iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=88A@TC=25℃ ·DrainSourceVoltage- :VDSS=660V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

N-ChannelEnhancementModePowerMOSFET

Description TheGT035N06Tusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters lSynchronousRectification

N-chTrenchMOSFET

GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU

N-ChannelPowerTrenchMOSFET

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N-chTrenchMOSFET

文件：103.88 Kbytes Page：9 Pages